• 951
• FS3SM-14A
• Mitsubishi Electric Corporation
• Nch POWER MOSFET
• 4页
• 42K

• 952
• FS3SM-16A
• Mitsubishi Electric Corporation
• Nch POWER MOSFET
• 4页
• 42K

• 953
• FS3SM-18A
• Mitsubishi Electric Corporation
• Nch POWER MOSFET
• 4页
• 42K

• 954
• FS3UM-10
• Mitsubishi Electric Corporation
• Nch POWER MOSFET HIGH-SPEED SWITCHING USE
• 4页
• 67K

• 955
• FS5UM-10
• Mitsubishi Electric Corporation
• Nch POWER MOSFET
• 4页
• 43K

• 956
• HCS27D/Sample
• Intersil Corporation
• Radiation Hardened Triple 3-Input NOR Gate
• 8页
• 181K

• 957
• HCS27DMSR
• Intersil Corporation
• Radiation Hardened Triple 3-Input NOR Gate
• 8页
• 181K

• 958
• HCS27HMSR
• Intersil Corporation
• Radiation Hardened Triple 3-Input NOR Gate
• 8页
• 181K

• 959
• HCS27K/Sample
• Intersil Corporation
• Radiation Hardened Triple 3-Input NOR Gate
• 8页
• 181K

• 960
• HCS27KMSR
• Intersil Corporation
• Radiation Hardened Triple 3-Input NOR Gate
• 8页
• 181K

• 961
• HCTS147D/Sample
• Intersil Corporation
• Radiation Hardened 10-to-4 Line Priority Encoder
• 10页
• 144K

• 962
• HCTS147DMSR
• Intersil Corporation
• Radiation Hardened 10-to-4 Line Priority Encoder
• 10页
• 144K

• 963
• HCTS147HMSR
• Intersil Corporation
• Radiation Hardened 10-to-4 Line Priority Encoder
• 10页
• 144K

• 964
• HCTS147K/Sample
• Intersil Corporation
• Radiation Hardened 10-to-4 Line Priority Encoder
• 10页
• 144K

• 965
• HCTS147KMSR
• Intersil Corporation
• Radiation Hardened 10-to-4 Line Priority Encoder
• 10页
• 144K

• 966
• HCTS27DMSR
• Intersil Corporation
• Radiation Hardened Triple 3-Input NOR Gate
• 8页
• 339K

• 967
• HCTS27HMSR
• Intersil Corporation
• Radiation Hardened Triple 3-Input NOR Gate
• 8页
• 339K

• 968
• HCTS27KMSR
• Intersil Corporation
• Radiation Hardened Triple 3-Input NOR Gate
• 8页
• 339K

• 969
• HGT1S3N60C3DS
• Fairchild Semiconductor
• 6 A, 600 V, UFS N-Channel IGBT with Anti-Parallel Hyperfast Diodes
• 8页
• 340K

• 970
• HGT1S3N60C3DS9A
• Fairchild Semiconductor
• 6 A, 600 V, UFS N-Channel IGBT with Anti-Parallel Hyperfast Diodes
• 8页
• 340K

• 971
• HGTP3N60C3D
• Fairchild Semiconductor
• 6 A, 600 V, UFS N-Channel IGBT with Anti-Parallel Hyperfast Diodes
• 8页
• 340K

• 972
• HI5667/6CA
• Intersil Corporation
• 8 Bit, 60 Msps A/D Converter with Internal Voltage Reference
• 10页
• 262K

• 973
• HI5667/6CB
• Intersil Corporation
• 8 Bit, 60 Msps A/D Converter with Internal Voltage Reference
• 10页
• 262K

• 974
• HI5767/2CA
• Intersil Corporation
• 10 Bit, 20 Msps A/D Converter with Internal Voltage Reference
• 13页
• 877K

• 975
• HI5767/2CB
• Intersil Corporation
• 10 Bit, 20 Msps A/D Converter with Internal Voltage Reference
• 13页
• 877K

• 976
• HI5767/2IA
• Intersil Corporation
• 10 Bit, 20 Msps A/D Converter with Internal Voltage Reference
• 13页
• 877K

• 977
• HI5767/4CA
• Intersil Corporation
• 10 Bit, 40 Msps A/D Converter with Internal Voltage Reference
• 13页
• 877K

• 978
• HI5767/4CB
• Intersil Corporation
• 10 Bit, 40 Msps A/D Converter with Internal Voltage Reference
• 13页
• 877K

• 979
• HI5767/6CA
• Intersil Corporation
• 10 Bit, 60 Msps A/D Converter with Internal Voltage Reference
• 13页
• 877K

• 980
• HI5767/6CB
• Intersil Corporation
• 10 Bit, 60 Msps A/D Converter with Internal Voltage Reference
• 13页
• 877K

• 981
• HI5767/6IB
• Intersil Corporation
• 10 Bit, 60 Msps A/D Converter with Internal Voltage Reference
• 13页
• 877K

• 982
• HN3C17FU
• Toshiba America, Inc.
• Transistor Silicon NPN Epitaxial Planar Type
• 1页
• 959K

• 983
• HS1-3282-8
• Intersil Corporation
• Special Bus Interface Devices
• 页
• K

• 984
• HS4-3282-8
• Intersil Corporation
• Special Bus Interface Devices
• 页
• K

• 985
• HS4-3282-9+
• Intersil Corporation
• Special Bus Interface Devices
• 页
• K

• 986
• HUF75639S3R4851
• Fairchild Semiconductor
• 56 A, 115 V, 0.025 ohm, N-Channel UltraFET Power MOSFET
• 10页
• 204K

• 987
• HUF75939P3
• Fairchild Semiconductor
• 22 A, 200 V, 0.125 ohm, N-Channel, UltraFET Power MOSFET
• 10页
• 195K

• 988
• HUF75939S3ST
• Fairchild Semiconductor
• 22 A, 200 V, 0.125 ohm, N-Channel, UltraFET Power MOSFET
• 10页
• 195K

• 989
• HUF75945G3
• Fairchild Semiconductor
• 38 A, 200 V, 0.071 ohm, N-Channel, UltraFET Power MOSFET
• 10页
• 209K

• 990
• HUF75945P3
• Fairchild Semiconductor
• 38 A, 200 V, 0.071 ohm, N-Channel, UltraFET Power MOSFET
• 10页
• 209K

• 991
• HUF75945S3ST
• Fairchild Semiconductor
• 38 A, 200 V, 0.071 ohm, N-Channel, UltraFET Power MOSFET
• 10页
• 209K

• 992
• HUF76407DK8
• Fairchild Semiconductor
• 3.5 A, 60 V, 0.105 ohm, Dual N-Channel, Logic Level UltraFET Power MOSFET
• 12页
• 262K

• 993
• HUF76407DK8T
• Fairchild Semiconductor
• 3.5 A, 60 V, 0.105 ohm, Dual N-Channel, Logic Level UltraFET Power MOSFET
• 12页
• 262K

• 994
• HUFA76407DK8
• Fairchild Semiconductor
• 3.5 A, 60 V, 0.105 ohm, Dual N-Channel, Logic Level UltraFET Power MOSFET
• 12页
• 263K

• 995
• HUFA76407DK8T
• Fairchild Semiconductor
• 3.5 A, 60 V, 0.105 ohm, Dual N-Channel, Logic Level UltraFET Power MOSFET
• 12页
• 263K

• 996
• HYM322035GS-50
• Infineon Technologies Corporation
• 2M x 32-Bit Dynamic RAM Module
• 10页
• 79K

• 997
• HYM322035GS-60
• Infineon Technologies Corporation
• 2M x 32-Bit Dynamic RAM Module
• 10页
• 79K

• 998
• HYM322035GS-70
• Infineon Technologies Corporation
• 2M x 32-Bit Dynamic RAM Module
• 10页
• 79K

• 999
• HYM322035S-50
• Infineon Technologies Corporation
• 2M x 32-Bit Dynamic RAM Module
• 10页
• 79K

• 1000
• HYM322035S-60
• Infineon Technologies Corporation
• 2M x 32-Bit Dynamic RAM Module
• 10页
• 79K